About Us

Advanced CMOS-based logic and memory devices need integration of new channel materials, gate-stacks, and contacts in novel device configurations. These need to be designed, simulated, fabricated, and electrically tested. Our team of engineers can provide service in all of these regimes. Additionally, we can perform full suite of electrical testing at various temperature ranges to provide reliability, and performance metrics for these devices. 

In memory space, we can perform read-write, read-write endurance, retention, switching speed, bit-flips, variability tests.  For successful integration of these technologies in mainstream foundry, the processes technology used for these devices need to be compatible with CMOS process-flow. With our extensive industry and research experience in this area, we will help meet this objective. 

  Monolithic integration of “emerging memory” technologies ranging from RRAMs, Gated-RRAMs (patent # US10553793B2), Thin Film Transistors, Ferroelectric FETs.  and other components such as BEOL compatible On-Chip Antennas, Sensors, etc. has potential to make CMOS more efficient and secure by increasing the chip functionality per unit area. We can process “Emerging Memory” technologies on pre-fabricated CMOS dies. Additionally, we can co-design layouts with CMOS integrated with emerging technologies.  We can also perform integrated testing. 

Neuromorphic and Brain-Inspired computing architectures have potential to naturally integrate Artificial Intelligence in Edge devices. Our team can help design neuromorphic processors to meet your applications needs all the way from devices to systems technology co-optimization. In neuromorphic kernels, memory devices are expected to play a key role. We can help prototype and test various memory technologies to provide detailed performance against desired training and inferencing algorithms.  We will be happy to discuss our patents in this area.